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A 7-eV bandgap semiconductor based on silicon-doped α-(AlxGa1−x)2O3

Jacob Steele iD, Debaditya Bhattacharya, Kazuki Nomoto, Naomi A. Pieczulewski, Preston Sorensen iD, Viet-Anh Ha iD, Nick Pant, Ihit Shukla, Shaon Das iD, Ufuk Kilic, Madhav Ramesh, Feliciano Giustino iD, Baishakhi Mazumder, M. K. Indika Senevirathna, Michael D. Williams, Mathias Schubert, David A. Muller iD, Huili G. Xing iD, Debdeep Jena iD, Darrell. G. Schlom iD

DOI10.1038/s41586-026-11085-3
PublisherSpringer Science and Business Media LLC
Journal / SourceNature
Published2026-10-07
Metadata Deposited2026-10-07 (updated: 2026-10-07)
Subject—
Languageen
ISSN0028-0836, 1476-4687
Typejournal-article
Volume / Issue / Pages— / — / —
Citations0
References deposited72
Access / license metadataAccess not determined License 1 ↗A reuse license does not by itself establish whether the full text is freely readable.